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Institute (NGI). This work will involve ex-situ characterisation of a variety of beam-sensitive electrocatalytic materials using a range of scanning transmission electron microscopy (STEM) and transmission
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the Arkansas Materials Institute. One position, in Mechanical Engineering (College of Engineering), centers on transmission electron microscopy; two, in Physics (Fulbright College of Arts and Sciences), center
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electron microscopy (cryo-TEM) and (2) image analysis using software such as RELION or cryoSPARC. This methodology has already been widely used in structural biology but has not yet been applied sufficiently
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optical transmission (EOT) in the UV-VIS-NIR spectral range. The insights from this project will have considerable impact on the fields of photovoltaics, flat screens and flexible displays, as
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transmission electron microscopy (SEM and TEM), not only for characterization but also as an active platform for controlled material transformation, local synthesis, nanoscale fabrication and engineering of low
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transmission electron microscopy (TEM/STEM) and/or advanced image-processing techniques; proficiency in programming and in the application and development of software and computational tools for scientific data
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structure–property relationships and advancing the understanding of these novel catalytic systems. Perform electron microscopy analyses, including transmission electron microscopy (TEM) and in situ TEM
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strong background in Transmission Electron Microscopy (TEM) and semiconductor materials characterization. The ideal candidate will have either a PhD in a relevant field or 5+ years of hands-on experience
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. Structural, chemical, and morphological characterization (X-ray diffraction – DRX, scanning electron microscopy – SEM, transmission electron microscopy – TEM, Raman spectroscopy, Fourier transform infrared
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to techniques such as single-particle analysis, cryo-electron tomography, cryo-focused ion beam micromachining, cryo-scanning electron microscopy, correlative light and electron microscopy studies, and