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such as Molecular Beam Epitaxy interconnected in ultra-high vacuum including in-situ ARPES characterization. The candidate will be benefit from these facilities, as well as training and access to clean room
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University College London and is home to 11 state-of-the-art epitaxial reactors, including Metal-Organic Vapour-Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE) reactors, as well as a wide range of
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position. The student researcher will be asked to assist in substrate preparation treatments for molecular beam epitaxy. The successful applicants will assist in our work to apply plasma treatments
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sandwiches composed of layered transition metal chalcogenides, oxides or iodides using the modulated elemental reactants method in a ultra-high vacuum molecular beam epitaxial system. Using a combination of X
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metals will be at the core of this project. Various deposition techniques such as Molecular Beam Epitaxy, Physical Vapor Deposition and Atomic Layer Deposition will be used to research the ideal
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the associated heterostructures on silicon substrate by Molecular Beam epitaxy (MBE). MBE growth will be performed in a dedicated chalcogenide reactor installed at IEMN, equipped with Ga, In and Se
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thin films of a transparent conducting perovskite oxide and its oxynitrides on various perovskite oxide substrates using a hybrid molecular beam epitaxy-pulsed laser deposition (MBE-PLD) technique
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, a strong knowledge of ultra-high vacuum environment, sample preparation by molecular beam epitaxy and ARPES and/or Low temperature STM. The position is founded for 1+1 years by two different founding
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will synthesize and characterize thin film quantum materials utilizing advanced molecular beam epitaxy and create nano-scale devices by combining topological materials with superconductivity and
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the electronic and transport properties of APBs in III-V/Si(001) epilayers. Various III-V materials (III-P, III-Sb, III-As) with emerging APBs grown on nominal and vicinal silicon substrates by molecular beam