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for a large number of prominent investigations in mesoscopic physics. The epitaxy is currently done with a molecular beam epitaxy reactor for high mobility growth. We are currently also acquiring a new
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of Sn-based group IV semiconductors using CVD and molecular beam epitaxy (MBE) tools. (ii) Structural characterization of the SAG materials down to the atomic-level. (iii) Fabrication of infrared photonic
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molecular beam epitaxy. • The deposition of a PCM shell around the QD-NWs. • The optical study by photoluminescence setups of this semiconductor-PCM hybrid nanostructure to quantify the impact of the PCM
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the reversibility of the process. In this thesis, the recruited PhD student will work on: The growth of InAs/InP quantum dot – nanowires by molecular beam epitaxy. The deposition of a PCM shell around
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with TWINS project and will consist in the molecular beam epitaxy of ScAlN alloy [3] and the characterization of ScAlN/GaN heterostructures. The main objective will be to correlate growth conditions and
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science that these detectors can deliver in the future. The solution pursued by the proposed research foresees the use of crystalline coatings made of GaAs/GaAlAs stacks grown via molecular beam epitaxy
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]. Furthermore, they can contain low toxic and abundant elements [3,7], and allow proper advanced integration on Si-based microelectronic platforms by molecular beam epitaxy (MBE) for which the leading team has a
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such as Molecular Beam Epitaxy interconnected in ultra-high vacuum including in-situ ARPES characterization. The candidate will be benefit from these facilities, as well as training and access to clean room
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and characterization of the spectral filter and TPV cell designed in stage 2. Fabrication will be carried out using cleanroom micro-nano fabrication processes (molecular beam epitaxy, etching
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the associated heterostructures on silicon substrate by Molecular Beam epitaxy (MBE). MBE growth will be performed in a dedicated chalcogenide reactor installed at IEMN, equipped with Ga, In and Se