Sort by
Refine Your Search
-
Category
-
Country
-
Program
-
Employer
- CNRS
- Brookhaven Lab
- Monash University
- NIST
- Oak Ridge National Laboratory
- Pennsylvania State University
- ; University of Sheffield
- CEA
- ESPCI
- Ecole Centrale de Lyon (ECL)
- Georg August University of Göttingen
- IMEC
- Institut des Nanotechnologies de Lyon
- Institute for Material Physics
- National Renewable Energy Laboratory NREL
- Oddělení magnetických měření a materiálů (9277)
- Rutgers University
- The Institute of Physics of the Academy of Science
- UNIVERSIDAD AUTÓNOMA DE MADRID
- University of Arkansas
- University of Delaware
- University of New South Wales
- University of Rennes - CNRS
- University of Sheffield
- Université de Lille
- 15 more »
- « less
-
Field
-
]. Furthermore, they can contain low toxic and abundant elements [3,7], and allow proper advanced integration on Si-based microelectronic platforms by molecular beam epitaxy (MBE) for which the leading team has a
-
such as Molecular Beam Epitaxy interconnected in ultra-high vacuum including in-situ ARPES characterization. The candidate will be benefit from these facilities, as well as training and access to clean room
-
and characterization of the spectral filter and TPV cell designed in stage 2. Fabrication will be carried out using cleanroom micro-nano fabrication processes (molecular beam epitaxy, etching
-
position. The student researcher will be asked to assist in substrate preparation treatments for molecular beam epitaxy. The successful applicants will assist in our work to apply plasma treatments
-
to explain the properties of the in-house grown 2D sandwich structures on a recently installed molecular-beam epitaxy system. We believe that following the tradition of our Dielectric department (Jan Fousek
-
sandwiches composed of layered transition metal chalcogenides, oxides or iodides using the modulated elemental reactants method in a ultra-high vacuum molecular beam epitaxial system. Using a combination of X
-
thin films of a transparent conducting perovskite oxide and its oxynitrides on various perovskite oxide substrates using a hybrid molecular beam epitaxy-pulsed laser deposition (MBE-PLD) technique
-
metals will be at the core of this project. Various deposition techniques such as Molecular Beam Epitaxy, Physical Vapor Deposition and Atomic Layer Deposition will be used to research the ideal
-
the associated heterostructures on silicon substrate by Molecular Beam epitaxy (MBE). MBE growth will be performed in a dedicated chalcogenide reactor installed at IEMN, equipped with Ga, In and Se
-
, a strong knowledge of ultra-high vacuum environment, sample preparation by molecular beam epitaxy and ARPES and/or Low temperature STM. The position is founded for 1+1 years by two different founding