Sort by
Refine Your Search
-
Country
-
Employer
- University of Oxford
- University of Texas at Arlington
- Delft University of Technology (TU Delft)
- EPFL
- Forschungszentrum Jülich
- King Abdullah University of Science and Technology
- Argonne
- CNRS
- Eindhoven University of Technology (TU/e)
- National Aeronautics and Space Administration (NASA)
- Pennsylvania State University
- University of Delaware
- University of Twente
- Biophysical and Biomedical Measurement Group, National Institute of Standards and Technology
- Boise State University
- Chalmers University of Technology
- Heriot Watt University
- ICMAB
- IMEC
- KAUST
- Linköping University
- National Energy Technology Laboratory (NETL)
- Oak Ridge National Laboratory
- Purdue University
- Singapore-MIT Alliance for Research and Technology
- The Ohio State University
- The University of Queensland
- The University of South Dakota
- Umeå University
- University of Jyväskylä
- University of Liverpool
- University of Lund
- University of Minnesota
- University of North Carolina at Charlotte
- University of Twente (UT)
- 25 more »
- « less
-
Field
-
The performance of X-ray microscopy has improved significantly over the last decade, enabling synchrotron-based X-ray imaging to resolve individual transistors in modern semiconductor devices. As the industry moves
-
integration, where chips are stacked and interconnected to create faster, more compact and more energy-efficient semiconductor devices. However, the detailed mechanisms that determine bonding quality are still
-
semiconductor devices and circuits based on fully depleted silicon-on-insulator (FDSOI) technology for next-generation AI hardware. This position focuses on the design, fabrication, characterization, and modeling
-
of the shuttled electron [Nat. Commun. 15, 1325 (2024) ] which makes this approach very promising for scaling up semiconductor spin qubit devices [Nature 653, 360 (2026) ]. This position focuses on experimentally
-
of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
-
Project Overview Wafer-Scale Integrated Sensing Devices based on Optoelectronic Metasurfaces (WISDOM) focuses on semiconductor wafer growth and processing for photonic applications. This program
-
Are you interested about sustainable semiconductor manufacturing? Join TU/e to pioneer circular manufacturing concepts for the next generation of photonic chips, working at the forefront
-
| Electrical and Computer Engineering Position Description: Conducts advanced research and development in the Department of Electrical & Computer Engineering, with a primary focus on cathodoluminescence
-
National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | about 1 hour ago
strong expertise in semiconductor device physics, hands-on experience with advanced detector testbeds, and a demonstrated ability to interpret device behavior and translate insights into optimized detector
-
Research Infrastructure? No Offer Description Join imec at the forefront of semiconductor innovation and help develop next-generation photoemission methods for understanding materials, interfaces and devices