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APPLICATION INSTRUCTIONS: CURRENT PENN STATE EMPLOYEE (faculty, staff, technical service, or student), please login to Workday to complete the internal application process . Please do not apply here, apply internally through Workday. CURRENT PENN STATE STUDENT (not employed previously at the...
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measurements is a critical bottleneck in modern industrial monitoring. This project proposes a monolithic micromachined system based on Silicon Carbide (SiC), strategically leveraging SiC’s superior chemical
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1 Aug 2026 Job Information Organisation/Company UNICUSANO Research Field Engineering Researcher Profile Recognised Researcher (R2) Leading Researcher (R4) First Stage Researcher (R1) Established Researcher (R3) Application Deadline 7 Aug 2026 - 23:59 (UTC) Country Italy Type of Contract To be...
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within the catalyst bed. Conductive materials (graphene, conductive SiC, and composites) both drive reactions and distribute heat, reducing losses, improving stability, and enabling compact, flexible
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for ambitious PhD research, with rigorous scientific supervision. The PhD student will join the transverse SiC research axis, which is highly dynamic and internationally recognized. He/She will benefit from a
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electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion losses, but their performance is
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, electric mobility, industrial electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion
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, fabrication and characterization of wide and ultra-wide bandgap semiconductor materials and devices, including GaN, Ga2O3, SiC and diamond (key enabling materials for power and RF electronics). Examples
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technologies (SiC and GaN), advanced and intelligent control, artificial intelligence and machine learning for power electronics, digital twins, condition monitoring and predictive maintenance. Important
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frequency high temperature operation of Wide Band Gap (WBG) SiC Semiconductor devices and applications. (2) Establish foundational work in the modelling, design, performance evaluation, and benchmarking