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measurements is a critical bottleneck in modern industrial monitoring. This project proposes a monolithic micromachined system based on Silicon Carbide (SiC), strategically leveraging SiC’s superior chemical
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for ambitious PhD research, with rigorous scientific supervision. The PhD student will join the transverse SiC research axis, which is highly dynamic and internationally recognized. He/She will benefit from a
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electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion losses, but their performance is
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, electric mobility, industrial electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion
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generation and analysis, particularly the Diamond and SiC material systems Good working knowledge of single-ion-implantation techniques and processes Ideally a good working relationship with both supply chain
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activities open to everyone interested, fostering a welcoming and inclusive community. Your immediate Line Manager will be the Head of Department. About the project High-frequency wide-bandgap (SiC/GaN
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level or self-assembled into aggregates, - colour centres in wide bandgap semiconductor nanostructures (ZnO, hBN, SiC), - low dimensional hybrid perovskites. We are also studying their coupling
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circuits. Diamond/SiC color centers on large-scale photonics. Silicon color center physics and applications. You will be part of a team of talented PhD students and collaborate with top European and
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circuits for quantum applications. PhD topics include: Superconducting single-photon detectors on integrated photonic circuits. Diamond/SiC color centers on large-scale photonics. Silicon color center