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Field
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frequency high temperature operation of Wide Band Gap (WBG) SiC Semiconductor devices and applications. (2) Establish foundational work in the modelling, design, performance evaluation, and benchmarking
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devices based on SiC and GaN. These devices provide a step-change in capability, enabling higher frequencies, higher voltages, and more efficient operation, all of which support smaller, high power density
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international role in material growth of wide-bandgap semiconductors (SiC, GaN, AlGaN and Ga2 O3 ) and two-dimensional materials. In cooperation between the experimental and theoretical divisions, we currently
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the use of GaN and SiC switches for power conversion Experience in the use of electrical simulation tools and the modelling of power conversion circuits and systems Knowledge of secondary power system
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quantum information science materials like diamond and SiC. Extensive experience conducting experimental research on materials physics systems, utilizing advanced synthesis, fabrication, spectroscopy
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generation and analysis, particularly the Diamond and SiC material systems Good working knowledge of single-ion-implantation techniques and processes Ideally a good working relationship with both supply chain
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-bandgap semiconductor technologies (SiC and GaN), advanced and intelligent control, artificial intelligence and machine learning for power electronics, digital twins, condition monitoring and predictive
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newly commissioned 22,000 sq. ft. laboratory and cleanroom, housing a 6” SiC fab with production-level equipment for low-volume prototyping and with industry level process control; ii) High-Density
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complementary areas above is welcomed. We particularly welcome applicants whose work has bridged from adjacent backgrounds — materials, devices, sensors, photonics, RF, power electronics (GaN/SiC), or board-level
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made of silicon carbide (SiC) and gallium nitride (GaN) promises many advantages over semiconductors made of silicon, including reduced switching losses, higher switching frequency and improved power