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Field
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for a large number of prominent investigations in mesoscopic physics. The epitaxy is currently done with a molecular beam epitaxy reactor for high mobility growth. We are currently also acquiring a new
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science that these detectors can deliver in the future. The solution pursued by the proposed research foresees the use of crystalline coatings made of GaAs/GaAlAs stacks grown via molecular beam epitaxy
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molecular beam epitaxy. • The deposition of a PCM shell around the QD-NWs. • The optical study by photoluminescence setups of this semiconductor-PCM hybrid nanostructure to quantify the impact of the PCM
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and characterization of the spectral filter and TPV cell designed in stage 2. Fabrication will be carried out using cleanroom micro-nano fabrication processes (molecular beam epitaxy, etching
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to explain the properties of the in-house grown 2D sandwich structures on a recently installed molecular-beam epitaxy system. We believe that following the tradition of our Dielectric department (Jan Fousek
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the reversibility of the process. In this thesis, the recruited PhD student will work on: The growth of InAs/InP quantum dot – nanowires by molecular beam epitaxy. The deposition of a PCM shell around
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offered at the research group of Dr. Nair López, under the umbrella of the ERC-Stg. “4SUNS”. The successful candidate will be expected to work on epitaxial growth using an molecular beam epitaxial (MBE) and
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of Sn-based group IV semiconductors using CVD and molecular beam epitaxy (MBE) tools. (ii) Structural characterization of the SAG materials down to the atomic-level. (iii) Fabrication of infrared photonic
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position. The student researcher will be asked to assist in substrate preparation treatments for molecular beam epitaxy. The successful applicants will assist in our work to apply plasma treatments
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programs use gas-source molecular beam epitaxy growth of nitrides, phosphides, and arsenides with a focus on nanostructures. Other in-house collaboration includes vapor phase and catalyst growth methods