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of diamond and gallium oxide as ultra-wide bandgap (UWBG) materials for PE applications, with a particular emphasis on the interfaces between these materials and their impact on device performance. As a
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enterprises, simultaneously creating a high-tech knowledge environment in the field of innovative materials’ production along with the technology and design of microelectronics and photonic devices, gallium
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Website: https://sites.chemistry.unt.edu/~sqma/. UNT has a highly diverse campus with a wide range of languages spoken in addition to English. We welcome candidates who have experience with HSI/MSIs and/or
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to the technological development of gallium nitride based electronic components for RF, microwave and millimetre-wave applications within the framework of a European project. The work will involve the fabrication
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falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent
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, gallium nitride technology, LTCC technology, printed electronics and medical and environmental sensors. Łukasiewicz–IMiF runs numerous projects financed from domestic and foreign funds annually, the goals
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-Gallium-Zinc-Oxide (IGZO) from the UK-based foundry Pragmatic. IGZO is attractive due to a simple process flow and potential small channel lengths on flexible substrates. This PhD topic is part of
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solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To integrate new technical capabilities into a small agile company like ISTL and ensure