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ferroelectric nitrides. You will use synchronized HiPIMS processes to tune the properties and performance of the films. The experiments will be informed by in-situ surface and interface analysis. Your
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experiments and enable autonomous experiments The focus of this position is to use advanced PVD processes to develop state-of-the art thin films, such as piezoelectric and ferroelectric nitrides. You
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production. In parallel, photoelectrochemical systems (PECs) integrated with solar concentrators will be developed, based on stable and scalable photoanodes (Fe and W oxides, Ta nitrides) functionalized with
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frequency filters. In this context we propose an original approach through the following project MINT: “Monolithic Integration of Group III-Nitrides on Metallic TiN: A Path Towards Advanced (Opto
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position is available for a candidate with expertise in applying solvothermal thermodynamics for heterogeneous systems for the synthesis of ternary nitrides. The candidate will develop a new process
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; Familiarity with and competence in the design, assembly, and operation of laboratory reactor systems, and the synthesis of metal oxides and/or metal nitrides and with standard materials
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experience with GaN, related III-nitrides, or other wide-bandgap semiconductor materials. Experience in first-principles calculations of structural, electronic, mechanical, or thermodynamic properties of