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to the technological development of gallium nitride based electronic components for RF, microwave and millimetre-wave applications within the framework of a European project. The work will involve the fabrication
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falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent
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product kinetics by ion implantation of advanced nuclear fuel (Uranium Nitride). The project is supported by the Swedish Radiation Safety Authority (https://www.stralsakerhetsmyndigheten.se/ ) and in
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 6 days ago
diamond, silicon carbide (SiC), or hexagonal boron nitride. In terms of sensitivity, NV centers in diamond stand out. However, to reach this level of performance, a magnetic bias field is usually required
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will be involved in quantum sensing experiments (temperature/magnetic field) that may involve novel materials such as point defects in 2D materials (e.g., in hexagonal Boron Nitride and related) and
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of novel photonic architectures and material platforms for next-generation photonic applications. Contribute to research activities involving silicon photonics, silicon nitride, thin-film lithium niobate
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of emerging quantum networks. In the last few years, color centers in the 2D material hexagonal boron nitride (hBN) have established them-selves as excellent quantum emitters, bringing new perspectives
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, B. Kuyken, N. Le Thomas, G. Morthier, G. Roelkens, K. Van Gasse. The main research directions are silicon(-nitride) nanophotonics, heterogeneous integration, optical communication, quantum optics
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professors in the group are R. Baets, P. Bienstman, W. Bogaerts, S. Clemmen, A. Curto, B. Kuyken, N. Le Thomas, G. Morthier, G. Roelkens, K. Van Gasse. The main research directions are silicon(-nitride
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be taken into consideration. Workplans and objectives to be achieved: Fellowship 1 – 2d materials TEM: Two-dimensional (2D) materials such as graphene, hexagonal boron nitride (h-BN), and transition