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chemical vapor deposition (MOCVD) system. The successful candidate will contribute to a project aimed at achieving high magnetic dopant concentrations and dopant activity, and studying the resulting
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: • Good knowledge of the optics and physics of compound semiconductors (emphasis on GaAs based materials, MOCVD, solar cells, infrared lasers and/or LEDs) • Experience/interest on III-V device
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growth, such as CVD, PECVD, MOCVD, MBE, or a comparable technique, and experience working with relevant process equipment. Experience characterizing crystalline materials and systematically developing or
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growth (3 MOCVD reactors for GaN) and device fabrication in clean-room ( https://www.crhea.cnrs.fr/en/technology-platform.htm ). For structural and optical characterization, CRHEA benefits from the P
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Eindhoven University of Technology (TU/e) | Eindhoven, Provincie Noord-Brabant | Netherlands | about 2 months ago
state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor, electron beam lithography, diverse plasma etching tools, wafer-level
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ideal candidates provide, depending on their respective career stage: Good knowledge of the optics and physics of compound semiconductors (emphasis on GaAs based materials, MOCVD, solar cells, infrared
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Eindhoven University of Technology (TU/e) | Eindhoven, Provincie Noord-Brabant | Netherlands | about 2 months ago
facility ( http://www.tue.nl/nanolab ), which hosts a state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor, electron beam