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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | about 1 month ago
diamond, silicon carbide (SiC), or hexagonal boron nitride. In terms of sensitivity, NV centers in diamond stand out. However, to reach this level of performance, a magnetic bias field is usually required
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will be involved in quantum sensing experiments (temperature/magnetic field) that may involve novel materials such as point defects in 2D materials (e.g., in hexagonal Boron Nitride and related) and
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be taken into consideration. Workplans and objectives to be achieved: Fellowship 1 – 2d materials TEM: Two-dimensional (2D) materials such as graphene, hexagonal boron nitride (h-BN), and transition
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photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser
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and characterisation at MTU Contribute to the heterogeneous integration of active components onto Silicon Nitride (SiN) photonic integrated circuits Be responsible for characterisation of ADL-PIC lasers
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solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To integrate new technical capabilities into a small agile company like ISTL and ensure
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Materials Spectroscopy (SMS) Laboratory, http://spectroscopy.kaust.edu.sa Institution: Division of Physical Science & Engineering, King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi
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(https://atomicfilmslab.org) and will work closely with the computational, device, and simulation teams, as well as with the education and mentorship teams comprising ASWESOME. This position will inform