Researcher within Ultraviolet nanowire/graphene laser

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We have a vacancy for a researcher at the Department of Electronic Systems (IES) at the Norwegian University of Science and Technology (NTNU).
The position will be in the “III-V semiconductor nano-device” group, that focuses on growth, characterization and processing of hybrid III-V semiconductor nanowire/graphene structures for use in various optoelectronic applications including solar cells, LEDs and lasers. The III-V nanowires are grown on graphene substrates in the molecular beam epitaxy (MBE) lab at the department. Optoelectronic characterization of individual nanostructures and devices is done using techniques such as low temperature micro-photoluminescence, photocurrent and electroluminescence, using a Nanophotonics lab at the department. For fabrication of the nano-devices, the NTNU NanoLab cleanroom facility is used.

The open position is connected to the project “Ultraviolet nanowire/graphene laser” (UV-Nanolaser) funded jointly by the NANO2021 program of the Research Council of Norway and NTNU.

The objective of the UV-Nanolaser project is to develop electrically injected semiconductor laser diodes based on positioned AlGaN nanowires grown by MBE on a graphene-based nanohole-mask. The final laser device will incorporate optical feedback based on a combination of Photonic Crystal (PC) effects and Distributed Bragg Reflectors (DBR) in order to develop an electrically injected semiconductor laser operating in the germicidal ultraviolet UVC spectral range (<280 nm). Such lasers are today in high demand for e.g. water, air and surface disinfection of bacteria and viruses and for many applications in medicine, in particular in ophthalmology and dermatology.

The project involves collaboration with international academic partners in Europe and Asia.

You will report to Head of department.