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Building a quantum computer that can solve real-world problems will require the integration of many highly coherent qubits. Hole-spin qubits in planar germanium quantum wells are among the most promising candidates for this goal, combining fast electrical control, compact device geometry, and...
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Job Description The Research Fellow will drive the development of atomic-layer-deposited (ALD) oxide semiconductor (OS) thin-film transistors and aggressively scaled short-channel OS devices
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the transmit power at frequencies around 300 GHz. High-electron-mobility transistors (HEMTs) based on InGaAs are well suited to implement power amplifiers at 300 GHz. Those HEMTs are currently limited in
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have experience working in a clean room and be familiar with: (1) the lithography of nanodevices, i.e. hall bar, field effect transistors and/or (2) CVD growth of ultrathin 2D materials (3) Dry
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, sensors, switch, electrochemical transistors, with scalable architectures for real-world applications. The School of Electrical and Electronic Engineering is one of the founding Schools of the Nanyang
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behavior of transistors, switches, and capacitors including relevant noise mechanisms (leakage, charge injection, kT/C, etc.) Analyze how noise from cryogenic control electronics couples into gate electrodes
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from mask design through fabrication to working electrical data — the whole flow, not a single module. • Electrical characterisation of nanoscale transistors (semiconductor parameter
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organic electrochemical transistors monitored by non-destructive spectroscopies for organic CMOS-like neuromorphic circuits (ICONIC)” in collaboration with the consortium. The post-holder will design and
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Job Description Fabrication 2D materials-based devices. The main research goals include (1) transistor devices and circuits based on 2D semiconductors and (2) Explore new device structures such as
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monitoring and bioelectronic medicine. The project builds on the lab's track record in flexible sensor arrays, field-effect-transistor biosensors, and functional nanomaterial interfaces, and will contribute