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on silicon nitride ribbon torsional resonators coupled directly via magnetic flux to a superconducting qubit. Building on the exciting flux-coupling concept pioneered in my group, you will bring mechanical
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, electric mobility, industrial electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion
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microplasmas. In this context, the objective is to demonstrate the feasibility of localized nitriding of metallic surfaces, such as AISI 316L steel, using these plasma sources. The control and understanding
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Łukasiewicz Research Network - Institute of Microelectronics and Photonics | Poland | about 1 month ago
nitride technology, LTCC technology, printed electronics and medical and environmental sensors. Łukasiewicz–IMiF runs numerous projects financed from domestic and foreign funds annually, the goals of which
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at: www.ftf.lth.se , www.nano.lu.se , https://kaw.wallenberg.org/en/research/semiconductor-bandgap-key-future-green-electronics, https://c3nit.se/ Subject description The purpose of this project is to develop a data
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performance modelling of cer-met and cer-cer fuel systems. Manufacture and properties of high-density high-conductivity fuel materials based on doped uranium nitride materials. The effects of dopants on uranium
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IT4Innovations National Supercomputing Center, VSB - Technical University of Ostrava | Czech | 2 months ago
for interested candidates for a research project in the field of QUANTUM THERMAL AND ELECTRONIC TRANSPORT, THERMOELECTRICITY within the Czech Science National grant No. 26-21973S - A new era for nitrides - towards
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to the technological development of gallium nitride based electronic components for RF, microwave and millimetre-wave applications within the framework of a European project. The work will involve the fabrication
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falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent
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product kinetics by ion implantation of advanced nuclear fuel (Uranium Nitride). The project is supported by the Swedish Radiation Safety Authority (https://www.stralsakerhetsmyndigheten.se/ ) and in