Sort by
Refine Your Search
-
Country
-
Employer
-
Field
-
that does not involve the use of glue or elastomer seals. The project will focus on microfluidic channels with a channel wall of low-stress silicon-rich silicon nitride. The proposed research aims to study
-
spin defects hosted in 2D hexagonal boron nitride (hBN), a widebandgap material which is a key building block of van der Waals heterostructures. More precisely, the work will be focused on the study of
-
-efficiency spectral tuning; spatial/spectral demultiplexing via microlens integration; low-power tunable circuit design; and low-loss silicon nitride (Si₃N₄) components for visible and near-infrared. The role
-
focus on microfluidic channels with a channel wall of low-stress silicon-rich silicon nitride. The proposed research aims to study the fundamentals of bonding glass or metals to silicon nitride coated
-
seals. The project will focus on microfluidic channels with a channel wall of low-stress silicon-rich silicon nitride. The proposed research aims to study the fundamentals of bonding glass or metals
-
electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion losses, but their performance is
-
on silicon nitride ribbon torsional resonators coupled directly via magnetic flux to a superconducting qubit. Building on the exciting flux-coupling concept pioneered in my group, you will bring mechanical
-
, electric mobility, industrial electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion
-
of emerging quantum networks. In the last few years, color centers in the 2D material hexagonal boron nitride (hBN) have established them-selves as excellent quantum emitters, bringing new perspectives
-
and characterisation at MTU Contribute to the heterogeneous integration of active components onto Silicon Nitride (SiN) photonic integrated circuits Be responsible for characterisation of ADL-PIC lasers