Sort by
Refine Your Search
-
Country
-
Employer
-
Field
-
direct continuation of that programme. The project will develop hybrid QD–Rb interfaces for frequency conversion and subsequent storage of single photons in warm rubidium vapour. High-quality epitaxial III
-
heterostrucure. a first approach we will use BaTiO3 as FE, Fe as FM1 material, Co40Fe60 as FM2, and NbN as SC. The samples will be grown using the molecular beam epitaxy facilities in the KU Leuven Ion and
-
tunable Josephson junctions incorporated into transmon qubit, using the InAs semiconductor as the weak link. InAs two-dimensional electron gases coated with tin are fabricated by molecular beam epitaxy
-
a state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor, electron beam lithography, diverse plasma etching tools, wafer-level
-
that transition to a ferroelectric-like state when their thickness is reduced to just a few nanometers. While epitaxy can help stabilize the antiferroelectric state, this approach has so far been limited to films
-
. In my group, we synthesise these functional nanomaterials from the bottom-up, using protocols of molecular beam epitaxy and on-surface supramolecular chemistry. We study these systems by means
-
Funded PhD studentship in AI-assisted materials discovery at the UK National Epitaxy Facility School of Electrical and Electronic Engineering PhD Research Project Competition Funded UK Students
-
grow new materials by molecular beam epitaxy, or create heterostructures of materials by exfoliating and stacking atomically thin layers from crystals, and fabricate nanoscale electronic devices
-
State Physics Electron Microscopy Semiconductor Epitaxy Semiconductor Optics Surface Physics 3. Theoretical Physics Complex Systems Solid-State Theory Semiconductor Physics Theoretical Bio- and