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device physics (semiconductors, MOS devices) · Good level of scientific English LanguagesENGLISHLevelExcellent Additional Information Selection process Applications must be sent before October 14th
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19 Sep 2026 Job Information Organisation/Company CNRS Department Laboratoire des technologies de la microélectronique Research Field Engineering Physics Technology Researcher Profile Recognised
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tunable Josephson junctions incorporated into transmon qubit, using the InAs semiconductor as the weak link. InAs two-dimensional electron gases coated with tin are fabricated by molecular beam epitaxy
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Université Paris-Saclay GS Sciences de l'ingénierie et des systèmes | Palaiseau, le de France | France | 3 months ago
14 Jul 2026 Job Information Organisation/Company Université Paris-Saclay GS Sciences de l'ingénierie et des systèmes Research Field Engineering » Electronic engineering Researcher Profile Recognised
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11 Jul 2026 Job Information Organisation/Company CNRS Department Institut d'Electronique de Microélectronique et de Nanotechnologie Research Field Engineering Physics Technology Researcher Profile
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17 Jul 2026 Job Information Organisation/Company CNRS Department XLIM Research Field Engineering Physics Technology Researcher Profile First Stage Researcher (R1) Application Deadline 6 Aug 2026
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chemistry, heterogeneous catalysis, electrical and thermal engineering, Multiphysics modelling, process engineering), along with a major industrial partner totalEnergies. Objective: To design, formulate