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7 Feb 2024 Job Information Organisation/Company Ghent University Research Field Engineering » Materials engineering Engineering » Mechanical engineering Chemistry » Other Researcher Profile First
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7 Feb 2024 Job Information Organisation/Company Ghent University Research Field Engineering » Materials engineering Researcher Profile First Stage Researcher (R1) Country Belgium Application
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Infrastructure? No Offer Description Join an international and multidisciplinary team to research on contacting 2D channel materials. The Silicon semiconductor technology has been the main driver in the last 60
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this reference code on your application form. Requirements Research FieldAllEducation LevelMaster Degree or equivalent Skills/Qualifications Required background: Master in Physics/ Materials Science
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in Science in a relevant field, such as (Physical) Chemistry, Materials Science, or Nanoscience, with a focus on materials chemistry and characterization. - Technical Expertise: Have hands
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department at imec, with strong links to the Material Engineering department of KU Leuven. Type of work: 40% experimental, 30% characterization, 20% data analysis, 10% literature study and writing Supervisor
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enrich your competences and skills through the PhD trajectory at KUL and the imec academy development center. [1] K. S. Novoselov et al., “2D materials and van der Waals heterostructures,” Science, vol
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memory based on van der Waals heterostructures. Nat Nanotechnol. 2021;16:874–881. H. Ago, S. Okada, Y. Miyata, K Matsuda, M. Koshino, K. Ueno, K. Nagashio. Science of 2.5 dimensional materials: paradigm
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10 Apr 2024 Job Information Organisation/Company University of Leuven Research Field All Researcher Profile First Stage Researcher (R1) Country Belgium Application Deadline 23 May 2024 - 00:00 (Africa/Abidjan) Type of Contract Not Applicable Job Status Not Applicable Is the job funded through...
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), 2927-2938 [8] Shi Y., et al. (2021). “Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics.” ACS Nano 15, 6, 9482