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unique, cross-linked, and multiscale approach to investigate the structural and interface properties of TiN substrates and III-nitride platelets/thin films and understand the physical properties by
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where silicon performance falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also
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: November/December 2026 Maximum period of contract/stipend agreement: Contract until 31 December 2029 Institution (full official name): Center for Nitride Semiconductor Physics and Technology “GaN
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official name): Center for Nitride Semiconductor Physics and Technology “GaN-Unipress”, an independent research unit of the Institute of High Pressure Physics, Polish Academy of Sciences Project leader
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IEMN has developed a unique nanoelectromechanical resonator (NEMS), consisting of a silicon nitride drum capacitively coupled to an Al drum resonator, so called double-drum resonator. Its unique device
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | about 1 month ago
centers/defects in large band gap materials like diamond, silicon carbide (SiC), or hexagonal boron nitride. In terms of sensitivity, NV centers in diamond stand out. However, to reach this level of
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study, through numerical simulations, the transport of ions and water in sub-nanometer hexagonal boron nitride (hBN) channels using an ML-MD approach with DFT-accurate MACE potentials. A central
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structure-properties relationship remains challenging. Moreover, graphene can be combined with other two-dimensional materials, such as semiconducting phosphorene or insulating boron nitride, into multi
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Nitride, and/or Lithium Niobate. The successful candidate will contribute to the development, optimization, and scaling of fabrication processes for integrated photonics. Key Responsibilities: The selected
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or elastomer seals. The project will focus on microfluidic channels with a channel wall of low-stress silicon-rich silicon nitride. The proposed research aims to study the fundamentals of bonding glass