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unique, cross-linked, and multiscale approach to investigate the structural and interface properties of TiN substrates and III-nitride platelets/thin films and understand the physical properties by
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where silicon performance falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also
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IEMN has developed a unique nanoelectromechanical resonator (NEMS), consisting of a silicon nitride drum capacitively coupled to an Al drum resonator, so called double-drum resonator. Its unique device
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 29 days ago
centers/defects in large band gap materials like diamond, silicon carbide (SiC), or hexagonal boron nitride. In terms of sensitivity, NV centers in diamond stand out. However, to reach this level of
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structure-properties relationship remains challenging. Moreover, graphene can be combined with other two-dimensional materials, such as semiconducting phosphorene or insulating boron nitride, into multi
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study, through numerical simulations, the transport of ions and water in sub-nanometer hexagonal boron nitride (hBN) channels using an ML-MD approach with DFT-accurate MACE potentials. A central
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Nitride, and/or Lithium Niobate. The successful candidate will contribute to the development, optimization, and scaling of fabrication processes for integrated photonics. Key Responsibilities: The selected
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or elastomer seals. The project will focus on microfluidic channels with a channel wall of low-stress silicon-rich silicon nitride. The proposed research aims to study the fundamentals of bonding glass
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. Experience in the power electronic industry, and a commercial-oriented approach to problem solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To
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Your Job In this Master's thesis, ternary nitride compound semiconductor samples are to be characterized both electrically and structurally using off-axis electron holography, scanning transmission