PhD Research Fellow in Semiconducting Complex Oxides for Next Generation Electronics (ref 257238)

8 Feb 2024
Job Information

Organisation/Company

University of Oslo

Research Field

Chemistry

Researcher Profile

First Stage Researcher (R1)

Country

Norway

Application Deadline

29 Feb 2024 - 23:00 (Europe/Oslo)

Type of Contract

Temporary

Job Status

Full-time

Hours Per Week

37.5

Is the job funded through the EU Research Framework Programme?

Not funded by an EU programme

Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

With the semiconductor industry getting close to the inherent limits of conventional silicon technology, there is a strong interest in designing and implementing new materials that can push and move the field beyond Moore’s law. A range of different strategies show great promise, including the use of complex oxides to enhance existing functionalities or generate completely new ones.

The current paradigm in transistor technologies makes use of metal-oxide-semiconductor field effect transistors (MOSFETs), usually based around doped silicon and a high-k insulator. This choice of materials offer several advantages with respect to processing and cost, but there are certainly other materials that can be used to enhance functionality and revolutionize the field. This paradigm-shift becomes a necessity when scaling of silicon is no longer an option, and we are rapidly approaching this crossroad.

A variety of challenges arise when moving to other material systems, most notably the difficulty of implementing more complex materials of sufficient quality in a cost-effective way and on a low thermal budget. At the research group for Nanostructures and Functional Materials (NAFUMA) , we develop methods for the integration of complex oxides in electronic model systems. This is carried out using the atomic layer deposition (ALD) technique. ALD is a variant of chemical vapor deposition (CVD) where gaseous precursors are sequentially pulsed into the reactor, opening for self-limiting growth with extreme control of thin film thickness, conformality and uniformity. NAFUMA has taken a leading role in this development, and currently collaborates with several major industry players in the field.

In this PhD Research Fellowship, we seek a candidate who will take part in the development of new functional materials that shows promise in the coming electronics paradigm based on active oxides. We have already developed and implemented processes for complex oxide metals and insulators/ferroelectrics, and now seek to complete the trio by unlocking the potential of complex oxide semiconductors. This will enable full epitaxial integration of functional MOS/MFS-stacks.

For more information and how to apply: https://www.jobbnorge.no/en/available-jobs/job/257238/phd-research-fellow-in-semiconducting-complex-oxides-for-next-generation-electronics

Requirements

Research Field

Chemistry

Education Level

Master Degree or equivalent

Research Field

Chemistry

Additional Information
Work Location(s)

Number of offers available

1

Company/Institute

Centre for Materials Science and Nanotechnology (SMN)

Country

Norway

Geofield

Where to apply

Website

https://www.jobbnorge.no/en/available-jobs/job/257238/phd-research-fellow-in-se…

Contact

City

Oslo

Website

https://www.mn.uio.no/smn/english/

Street

PO box 1072 Blindern

Postal Code

NO-0316

E-Mail

[email protected]

STATUS: EXPIRED