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unique, cross-linked, and multiscale approach to investigate the structural and interface properties of TiN substrates and III-nitride platelets/thin films and understand the physical properties by
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where silicon performance falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also
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IEMN has developed a unique nanoelectromechanical resonator (NEMS), consisting of a silicon nitride drum capacitively coupled to an Al drum resonator, so called double-drum resonator. Its unique device
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, and contribute to roadmaps, IP and publications. Where to apply Website https://www.imec-int.com/en/work-at-imec/job-opportunities/iii-v-active-photoni… Requirements Research Field Engineering
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design and simulate III-V semiconductor lasers for integration with silicon and silicon-nitride photonic circuits. You will define the epitaxial layer structure and the optical, electrical and thermal
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collaboration with PhD-students and researchers working with power electronic devices within the competence center for III-Nitride technology C3NiT and within a European network within the WBG Pilot Line