Sort by
Refine Your Search
-
runaway models and numerical methods in OpenFOAM. Design and optimize computational frameworks for high-performance simulation of reacting flows and battery safety phenomena on modern GPU architectures
-
of neurodegenerative disease Familiarity with git and GitHub Competence using Linux-based high-performance parallel computing systems Other information This is a special fixed-term position (SÄVA) of 6 months, 100
-
accelerators. Their reliability and precision are key to stable operation and high-quality light delivery to our users. As part of MAX 4U , several advanced accelerator systems will be developed and commissioned
-
. In the project you will work on: Designing an intent language that captures carbon, flexibility, and cost. Breaking high-level intents down into control actions. Tuning power-performance and thermal
-
high-performance parallel computing systems. Other information This is a permanent position, full time (100 %) with starting date November 1, 2026 or according to agreement. How to apply The position is
-
community within WARA M&L. The platform will be supported by the resources provided from WARA Common, a sister arena within WASP and HPC2N (high performance computing cluster). The work covers all aspects
-
or lab-based X-ray microtomography. Development of scientific visualizations. Development of user-friendly Graphical User Interfaces (GUI:s) capable of performing image processing, image analysis and
-
and shared cleanroom facility for the production of materials and components at the nanoscale. The Division has a strong commitment to undergraduate education, not least in the Master's programme
-
follow up of vacuum performance for the machine and the beamlines. The team is consisting of engineers and technicians who have long experience in vacuum systems for particle accelerators. Work duties and
-
semiconductors present challenges, but it can enable electronic devices with substantially better performance as compared to traditional power electronic devices based on Si and SiC. The position is part of a