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, gallium nitride technology, LTCC technology, printed electronics and medical and environmental sensors. Łukasiewicz–IMiF runs numerous projects financed from domestic and foreign funds annually, the goals
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Łukasiewicz Research Network - Institute of Microelectronics and Photonics | Poland | about 2 months ago
enterprises, simultaneously creating a high-tech knowledge environment in the field of innovative materials’ production along with the technology and design of microelectronics and photonic devices, gallium
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, electric mobility, industrial electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and reduce conversion
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falls short. Gallium nitride (GaN), a III-V semiconductor, is proven to be the material of choice for high- frequency, high-power, and high-temperature applications. GaN also offers a number of excellent
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solving. Experience with Gallium Nitride (GaN) MOSFETs in switched-mode power supplies. Main responsibilities: To integrate new technical capabilities into a small agile company like ISTL and ensure