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. For general application assistance or if you have questions about a job posting, please contact Human Resources at 479.575.5351. Department: Mechanical Engineering Department's Website: https
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a leading role in driving InP-based photonic integration towards the next level. A key enabler for our work is our state-of-the-art Nanolab cleanroom facility (http://www.tue.nl/nanolab ), which hosts
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Laser Doping or Pulsed Laser Induced Epitaxy, allowing the fabrication of ultra-doped Si:B layers, well above the B solubility limit in Si. The films will be characterized by X-Ray Diffraction
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of functional materials during epitaxial growth and under external stimuli such as electric and magnetic fields and light illumination. The platform, developed at PGI-7, enables the fabrication of free-standing
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MSCA Doctoral Network HINA - Hybrid INtegration of Alkaline niobate - tantalate films for advanced photonic and piezoelectric devices | Montpellier, Languedoc Roussillon | France | 23 days ago
(doctoral school UMLP) Montpellier, France, https://www.annealsys.com & www.ubfc.fr Supervisors: J. M. Decams, V. Astié, A. Bartasyte (UBFC) Objectives: (i) Preliminary transport tests of precursors selected
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@TU/e cleanroom facility (http://www.tue.nl/nanolab ), which hosts a state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor
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lasers for integration with silicon and silicon-nitride photonic circuits. You will define the epitaxial layer structure and the optical, electrical and thermal design of the laser. You will optimise
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heterostrucure. a first approach we will use BaTiO3 as FE, Fe as FM1 material, Co40Fe60 as FM2, and NbN as SC. The samples will be grown using the molecular beam epitaxy facilities in the KU Leuven Ion and
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Funded PhD studentship in AI-assisted materials discovery at the UK National Epitaxy Facility School of Electrical and Electronic Engineering PhD Research Project Competition Funded UK Students
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tunable Josephson junctions incorporated into transmon qubit, using the InAs semiconductor as the weak link. InAs two-dimensional electron gases coated with tin are fabricated by molecular beam epitaxy