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received no later than the time the employment decision is made. Required qualifications : a PhD in physics or chemistry very good oral and written proficiency in English. experience in epitaxy, MOVPE and
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Helmholtz-Zentrum Dresden-Rossendorf - HZDR - Helmholtz Association | Dresden, Sachsen | Germany | 26 days ago
spectroscopy techniques # Isolate single C-centers created by combining molecular beam epitaxy (MBE) with ion implantation, and comprehensively characterize their optical, spin, and photophysical
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infrastructure Qualifications We are looking for candidates with experience in several of the following areas: Ultra-high vacuum technology Crystal growth systems (MBE, epitaxy or related technologies) Process
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infrastructure Qualifications We are looking for candidates with experience in several of the following areas: Ultra-high vacuum technology Crystal growth systems (MBE, epitaxy or related technologies) Process
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Łukasiewicz Research Network - Institute of Microelectronics and Photonics | Warsaw, Indiana | United States | 12 days ago
taking technological process constraints into account, and cooperating with teams responsible for epitaxy, fabrication, characterisation and device integration. Participating in the development and
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Growing materials: molecular-beam epitaxy, pulsed laser deposition, sputtering, ion-beam deposition, the MANGO multi-source system, and a glovebox cluster for 2D materials. Making devices: electron
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: Experience with diamond CVD or other wide- or ultra-wide-bandgap materials; epitaxy; substrate preparation; or polishing. Familiarity with diamond or silicon-carbide color centers, spin measurements, or
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/FM1/SC/FM2 heterostrucure. a first approach we will use BaTiO3 as FE, Fe as FM1 material, Co40Fe60 as FM2, and NbN as SC. The samples will be grown using the molecular beam epitaxy facilities in the
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Eindhoven University of Technology (TU/e) | Eindhoven, Provincie Noord-Brabant | Netherlands | about 2 months ago
state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor, electron beam lithography, diverse plasma etching tools, wafer-level
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Eindhoven University of Technology (TU/e) | Eindhoven, Provincie Noord-Brabant | Netherlands | about 2 months ago
facility ( http://www.tue.nl/nanolab ), which hosts a state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor, electron beam