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Field
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School of Electrical and Electronic Engineering is one of the founding Schools of the Nanyang Technological University. Built on a culture of excellence, the School is renowned for its high academic
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Role: Research Assistant/Associate in RF and Experimental Characterisation of Microfabricated Electronic Devices Grade and Salary: Grade 6 - £31,236 - £36,636 / Grade 7 - £37,694 - £47,389 per annum
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, such as microscopes, electronic pH meters, spectrophotometers, and balances. Assist in maintenance of various equipment in the Biology Learning Center, including cameras, computers, monitors, printers and
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Sciences includes a core facility with rtPCR, fluorescence and UV-visible plate reader, SEM and TEM electron microscopes and a CIRM funded stem cell shared resource facility to house a cell culture suite
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University of North Carolina Wilmington | Wilmington, North Carolina | United States | about 16 hours ago
maintaining geology laboratory facilities and collections, including the departmental Geologic Materials Preparation Laboratory, petrographic microscopes, and extensive mineral and rock collections used
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medias or other solutions, culturing bacteria strains, setting up specialized microscopes and setting up electronic hematology differential cell counters. Other responsibilities will include maintaining a
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treatment and reaction conditions. The work will involve the use of state-of-the-art transmission electron microscopes, together with advanced data acquisition and analysis methodologies, to achieve high
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advanced artificial intelligence models (cellular automata, machine learning) of diffusion processes at high temperatures Performing in-depth microscopic and phase analyses of the oxides formation in
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microscopical information and are translatable to humans. You will specifically work on data integration and biophysical modelling to make the most of the wealth of information in the multi-modal datasets
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. The mechanisms governing the growth of Sn on InAs and other III-V semiconductors remain poorly understood. Imaging Sn/InAs interfaces at atomic resolution using a transmission electron microscope (TEM) gives