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Bias-induced Strain Mapping of Electronic and Energy Materials in an Atomic Force Microscope NIST only participates in the February and August reviews. Strain is induced when an electric field is
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-of-the-art superconducting qubits, and the Quantitative Nanostructure Characterization Group, who are experts in (scanning) transmission electron microscopy ((S)TEM) characterization of materials. Our
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force microscopy, electric force microscopy, laser scanning confocal microscopy and scanning electron microscopy) and spectroscopic (infrared microscope, Raman microscope, fluorescence microscope, ultra
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RAP opportunity at National Institute of Standards and Technology NIST Microscopically-Controlled Quantum Systems of Neutral Atoms for Many-Body Physics and Metrology Location Physical
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Imaging Facility, which includes a spherical-aberration corrected transmission electron microscope (TEM), a three-dimensional atom probe, a helium-ion microscope, and a focused-ion beam microscope. Our
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properties such as electron-based spectroscopies, nanometer-scale imaging with energy filtering using a photoemission electron microscope (PEEM), and other optical measurements. Research is done in close
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opportunity location 50.77.11.B8287 Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Stephen A. Langer [email protected] 301.975.5423 Description We
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metrological quantum resistance standard. Future electrical standard investigations may include the challenge of developing graphene metrology for Single Electron and Josephson voltage devices. The development
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, Quantum Physics Division opportunity location 50.68.92.B8346 Boulder, CO NIST only participates in the February and August reviews. Advisers name email phone Thomas Tupper Perkins [email protected]
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atomic-scale characterization with (scanning) transmission electron microscopy (STEM/TEM). An aberration corrected scanning transmission electron microscope is available with a variety of detectors (HAADF