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Description Objective The goal is to assess and mitigate degradation in high-voltage Na layered oxide cathodes (moisture instability, irreversible phase transitions, parasitic reactions with electrolyte) using
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in thin film deposition by electron-beam evaporation and atomic layer deposition (ALD); Experience in X-ray photoelectron spectroscopy (XPS). Preferred factors: Preference will be given to candidates
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applications for a Postdoctoral Researcher to join the ALD4TANDEM project, an ambitious research programme developing advanced atomic layer deposition (ALD) technologies for next-generation perovskite-silicon
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range of techniques will be used to deposit both perovskites and SAM layers, including slot-die deposition, thermal evaporation, spin-coating and spray-coating The results of this work will be used by
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. Powerful new techniques e.g., atomic layer deposition (ALD) can be used to form ultrathin, high quality layers suitable for antireflection coatings to improve detector QE and high performance optical
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lithography and/or atomic layer deposition and/or gate dielectric characterization methods will be considered favorably. Dutie and Responsibilities Develop, operate, and characterize semiconductor device
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of proposals and reports. Assist in teaching classes. 35% of Time the Postdoctoral Research Fellow may: Design and conduct experimental research in atomic layer deposition and annealing. Develop atomic scale