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AUSTRALIAN NATIONAL UNIVERSITY (ANU) | Canberra, Australian Capital Territory | Australia | about 24 hours ago
to advance the technology towards commercialisation. About you We are seeking candidates with a PhD or relevant research experience in photovoltaics, perovskite solar cells, semiconductor devices, materials
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materials science. Initial appointments are awarded for one year at a time to outstanding young scientists and engineers, with renewal for a second and third year contingent upon continued funding and
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opportunities. This is an excellent opportunity to work at the interface of materials science, chemistry, and biotechnology, contributing to the development of green manufacturing technologies. This is a full
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This position is dedicated to developing highly efficient on-chip multifunctional optoelectronic devices based on two-dimensional (2D) materials. Job responsibilities include the synthesis of 2D
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The School of Materials Science and Engineering (MSE) provides a vibrant and nurturing environment for staff and students to carry out inter-disciplinary research in key areas such as Computational
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crowns are fabricated from conventional ceramics, lithium silicate/lithium disilicate, resin composites, hybrid CAD/CAM materials and newer additively manufactured materials. Independent evidence on
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Details Title BHEX Postdoctoral Research Fellow: Black Hole Explorer (BHEX) School Faculty of Arts and Sciences Department/Area Black Hole Initiative Position Description Applications are invited
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research that reaches beyond the university. About you (Selection Criteria) A PhD in Materials Science, Chemical Engineering, Chemistry, Electrochemistry, photovoltaic or a closely related discipline
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Details Title Postdoctoral Fellow: Black Hole Initiative School Faculty of Arts and Sciences Department/Area Black Hole Initiative Position Description Applications are invited for Postdoctoral
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1. Possess a Ph. D Degree in Electrical Engineering with strong knowledge in semiconductor device technology and process. 2. Strong knowledge in semiconductor device physics. 3. At least 4