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Field
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Job Description • Optimize the fabrication technology for transistors based on 2D transition metal dichalcogenides materials and metal oxides (ITO, IGZO) • Optimize the monolithic 3D integration
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sciences and technology aspects of novel electronic materials, with a strong emphasis on graphene as well as other 2D materials (MoS2). The group also works towards the development of technological
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policies Disseminate results in the form of peer-reviewed publications and presentations at international conferences Job Requirements: PhD in Physics, Optics, Material sciences, Engineering from a reputable
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progress, provide mentorship to graduate teaching assistants (Associate Instructors) in 1st and 2nd-year Russian courses, lead the training and supervision of tutors, and develop instructional materials
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of Practical Epitaxial Moiré Superstructures with Novel Electronic Properties. The main responsibilities of the position include: To screen through various databases of 2D and bulk materials to identify
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Job Description We are looking for Research Fellows who have experience in realizing two-dimensional (2D) memtransistor / memristor devices and its integration with active selectors for ultralow
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development of novel 2D halide perovskite materials and their evaluation in device structures (e.g., transistors, detectors, LEDs, solar cells). The influence of the interfaces in these devices on performance
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Materials and Devices (AEMD) group focuses on the material sciences and technology aspects of novel electronic materials, with a strong emphasis on graphene as well as other 2D materials (MoS2). The group
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MBE cluster for topological materials, consisting of a chamber for high purity III-V materials (As, Al, Ga, In, Sb, Bi, …) coupled to a second superconducting/ferromagnetic metal chamber (Al, Nb, … / Fe
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Devices (AEMD) group focuses on the material sciences and technology aspects of novel electronic materials, with a strong emphasis on graphene as well as other 2D materials (MoS2). The group also works