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Scientist - Development of lateral GaN-HEMT transistors with ferroelectric gate architecture (m/f/div)

NaMLab gGmbH | Dresden, Sachsen | Germany | 2 months ago

» Physical chemistry Technology » Materials technology Technology » Nanotechnology Researcher Profile First Stage Researcher (R1) Country Germany Application Deadline 30 Apr 2024 - 12:00 (Europe/Berlin) Type

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