Scientist - Development of lateral GaN-HEMT transistors with ferroelectric gate architecture (m/f/div)

12 Mar 2024
Job Information

Organisation/Company

NaMLab gGmbH

Department

Research

Research Field

Physics » Solid state physics
Physics » Electronics
Engineering » Electrical engineering
Chemistry » Physical chemistry
Technology » Materials technology
Technology » Nanotechnology

Researcher Profile

First Stage Researcher (R1)

Country

Germany

Application Deadline

30 Apr 2024 - 12:00 (Europe/Berlin)

Type of Contract

Temporary

Job Status

Full-time

Hours Per Week

40

Offer Starting Date

1 May 2024

Is the job funded through the EU Research Framework Programme?

H2020

Reference Number

101111890

Is the Job related to staff position within a Research Infrastructure?

No

Offer Description

NaMLab gGmbH is a research organization and associated institute of the Technical University Dresden. NaMLab provides industry-oriented and basic research in material science for electronic devices. Based on its key expertise in dielectric materials for semiconductor devices, NaMLab focuses on the integration and application of materials applied to reconfigurable and energy efficiency devices. NaMLab‘s approach of placing the device rather than the material system at the center of its research activities differentiates it from other world-class material research activities in the Dresden area. Additionally, it allows taking full advantage of the already existing expertise by forming orthogonal consortia. It, therefore, fills the gap between basic materials research and its application towards electronic circuits and systems.

Advanced semiconductor power devices are a key enabler for the technological trans­formation towards a sustainable world. Wide band gap Gallium Nitride (GaN) High-Electron-Mobility-Transistors (HEMT) are the backbone of lateral GaN devices for power applications entering the electronics market. A HEMT test structure device technology has been set up at NaMLab. In this position fundamental research has to be conducted to extend the gate technology of the HEMT device with a ferroelectric gate dielectric material, thereby tuning the device threshold voltage with polarization direction and enhancing device functionality in integrated circuits. The research work can make use of the very experienced kownledge of NaMLab with ferroelectric materials and GaN technology. The result of the scientific work shall be used to obtain a PhD in Electrical Engineering at the TU Dresden.

Requirements

Research Field

Engineering » Electrical engineering

Education Level

Master Degree or equivalent

Research Field

Engineering » Electronic engineering

Education Level

Master Degree or equivalent

Research Field

Chemistry » Physical chemistry

Education Level

Master Degree or equivalent

Research Field

Physics » Solid state physics

Education Level

Master Degree or equivalent

Research Field

Physics » Electronics

Education Level

Master Degree or equivalent

Research Field

Technology » Nanotechnology

Education Level

Master Degree or equivalent

Research Field

Technology » Materials technology

Education Level

Master Degree or equivalent

Skills/Qualifications

• Very good Master in physics, material science, electrical engineering or equivalent,
• Good knowledge of transistor device operation and semiconductor device physics, and knowledge of GaN transistors and/or ferroelectrics is a plus.
• Experiences and strong interest in electrical transistor characterization and data analyses
• Experiences or knowledge in semiconductor device fabrication
• Good technical comprehension, professional English communication and writing skills
• Ability to work in a team environment
• Strong perseverance in experimental work
• Self-organized and conscientious way of working

Specific Requirements

non

Languages

ENGLISH

Level

Excellent

Languages

GERMAN

Level

Basic

Research Field

Engineering » Electrical engineeringPhysics » Solid state physicsTechnology » Materials technology

Additional Information
Benefits

• Collaboration with a dedicated, inspiring, interdisciplinary team working on leading technologies
• Research work on innovations originating from materials science and microelectronic devices
• focused guidance throughout the project
• Room for independent work and creative collaboration
• Flexible working time models for work life balance.

Eligibility criteria

We value and encourage the diversity of our employee skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity.

Selection process

• Two-Stage interview process after initial application forms received

Additional comments

Tasks

• Fabrication of transistors with semiconductor micro-technology processes in NaMLab cleanroom on available AlGaN/GaN heterostructure material.
• Electrical and physical characterization of these transistors for conceptual validation.
• Detailed electrical characterization in dynamic tests (switching) of the ferroelectric properties and their impact on device performance
• Process engineering and optimization in experiments for improvement of material properties and device performance
• Working in an interdisciplinary team together with other PhD students and technicians.
• Alignment in larger project consortia with academic and industrial partners

Website for additional job details

https://www.namlab.com/career/

Work Location(s)

Number of offers available

1

Company/Institute

NaMLab gGmbH

Country

Germany

State/Province

Saxony

City

Dresden

Postal Code

01187

Street

Nöthnitzer Straße 64a

Where to apply

E-mail

[email protected]

Contact

State/Province

Saxony

City

Dresden

Website

http://www.namlab.de

Street

Noethnitzer Str. 64a

Postal Code

01187

E-Mail

[email protected]

STATUS: EXPIRED