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framework for the joint analysis of large-scale structure (LSS) and gamma-ray data. By combining these complementary probes of the same underlying matter distribution, the project aims to sharpen constraints
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17 Jul 2026 Job Information Organisation/Company CNRS Department Institut de biologie structurale Research Field Chemistry Physics » Biophysics Biological sciences » Biological engineering
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The recruited researcher will work within the framework of the ANR project Ordered Graphs, Decompositions, Algorithms and Structures (GODASse). Due to their simple definition and versatility in modeling complex
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19 Jun 2026 Job Information Organisation/Company CNRS Department Institut Interdisciplinaire de Neurosciences Research Field Neurosciences Biological sciences Researcher Profile First Stage Researcher (R1) Application Deadline 9 Jul 2026 - 23:59 (UTC) Country France Type of...
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, the successful candidate will integrate phenotypic characterization, genetic perturbation, and comparative genomic analyses. * Culture and handling of clinical *Escherichia coli* strains. * Construction
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models, whilst respecting the specific spatial structure induced by river networks. - Cleaning, structuring and analysing historical long-term monitoring data (approx. 200 sites). - Adaptation and
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12 Sep 2026 Job Information Organisation/Company CNRS Department Institut de Pharmacologie et Biologie Structurale Research Field Biological sciences Medical sciences Pharmacological sciences
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MinION (SNPs, structural variants, transposable elements, …) - Analyses of evolutionary genomics (phylogenomics, orthology, selection, synteny) -Contribution to data production (strain collection and
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design workflows for nanoporous carbon electrodes for sodium-ion batteries. The objective is to accelerate the exploration of virtual carbons with varied microstructures by combining numerical structure
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on the realization, characterization and measurement of the structural and transport properties of superconducting devices made entirely out of silicon. Superconducting Si thin layers will be realized by Gas Immersion