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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | about 1 month ago
using electrical readout of atomic scale defects in silicon carbide. Sci Rep 6, 37077 (2016). https://doi.org/10.1038/srep37077 Field of Science: Technology Development Advisors: Hannes Kraus
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of Twente focused on developing circular production routes for silicon and silicon carbide, key materials for high-temperature and high-performance applications. The project brings together materials
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, optimizing, and sustaining semiconductor back-end-of-line (BEOL) process modules within the National Multi-User Silicon Carbide (MUSiC) Research and Fabrication Facility. The position will have primary
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, implementing, and sustaining wafer-level and device-level electrical test and characterization methods within the National Multi-User Silicon Carbide (MUSiC) Research and Fabrication Facility. This position
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: Experience with diamond CVD or other wide- or ultra-wide-bandgap materials; epitaxy; substrate preparation; or polishing. Familiarity with diamond or silicon-carbide color centers, spin measurements, or
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, the postdoctoral researcher will explore and optimize quantum defects across diamond, silicon carbide, boron nitride, molecular spin systems and other emerging Faculty IV - Electrical Engineering and
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: Electrical Engineering Funded by FFI, the TERMINATOR project investigates how fast-switching silicon carbide (SiC) and gallium nitride (GaN) power electronics affect the long-term reliability of
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the creation of processes and integration of those processes into the Multi-User Silicon Carbide Research and Fabrication Facility (MUSiC Fab) at the University of Arkansas. It supports research
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systems, electric mobility, industrial electrification and modern power grids. New wide-bandgap semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) can switch faster and
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including: i) Multi-User Silicon Carbide Research and Fabrication Laboratory (MUSiC), a newly commissioned 22,000 sq. ft. laboratory and cleanroom, housing a 6” SiC fab with production-level equipment