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Field
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applicant will have: A PhD in Materials Science, Applied Physics, Electrical Engineering, Chemistry or a closely related discipline. Strong background in modeling and simulation of thermal/energy systems
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fair recruitment process that does not rely purely on common research metrics. The successful applicant will have: A PhD in Materials Science, Applied Physics, Electrical Engineering, Chemistry or a
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calculations and hold (or expect to obtain soon) a PhD in computational materials physics or a related field; Excellent oral and written communication skills; The ability to work both independently and
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, presentations, software, datasets, and internal reports Position Requirements Recent or soon-to-be-completed PhD (within the last 0-5 years) in chemistry, chemical engineering, materials science, polymer science
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Computer Engineering (ECE) is looking for a Post Doctoral Researcher for its Nanoelectronics and Microelectronics program. Candidates with a strong background in materials, semiconductor physics, and devices
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founded in 1906 and named after its emphasis on the study of metals. Since then, our field has broadened to include all classes of materials from ceramics and polymers to semiconductors and biological
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publish research findings in peer-reviewed high-impact journals. Required Qualifications A postdoctoral research associate requires a PhD in Electrical Engineering, Physics, Materials Science and
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publish research findings in peer-reviewed high-impact journals. Required Qualifications A postdoctoral research associate requires a PhD degree in Electrical Engineering, Physics, Materials Science and
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University of North Carolina at Chapel Hill | Chapel Hill, North Carolina | United States | about 2 months ago
the design of defects in semiconductors. This position offers exciting opportunities to collaborate with experiment and theory groups. Candidates should be able to work both independently and collaboratively
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: heterojunction bipolar transistors, high electron mobility transistors (HEMTs); (2) Low-power devices: novel transistors (tunneling field-effect transistors, and Non-silicon metal-oxide-semiconductor field-effect