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of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
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surface based on elementary or unit cells incorporating active materials (electrically or optically), will require the development of technologies capable of replacing semiconductor components distributed
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Si, σ = 10+3 S/m) electrically conductive materials, and N or P doped-SiC semiconductors [2,3]. The study combines formulation and shaping of particles at controlled granulometry, to ensure mechanical
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