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of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
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knowledge of microelectronics, semiconductor devices and cleanroom fabrication technologies. Experience in the fabrication of III-V or wide bandgap semiconductor devices would be appreciated, in particular
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simulations for device design. We are looking for highly motivated candidates with experience in some (not necessarily all) of the following fields: physics and technology of semiconductor devices
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. The activity of the Research axis 3 falls into the domain of quantum nanophotonics. We are first interested in nanosources of light: - colloidal semiconductor nanocrystals based on CdSe, at the single object
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characterization of FSS/metasurface-type devices made reconfigurable through the integration of phase change materials (PCM). Part of the role will also involve understanding the mechanisms underlying the insulator
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Eligibility criteria The project is experimental. We are looking for motivated and experienced candidates in some (but not all) of the following areas: semiconductor device physics and technology