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computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. We are looking for you as a scientist (all genders) for MOCVD epitaxy with a focus on gallium
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SPECIFICS The Materials Research Institute (MRI) at Penn State seeks outstanding applicants for a Postdoctoral Scholar position focused on metalorganic chemical vapor deposition (MOCVD) growth and
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a state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor, electron beam lithography, diverse plasma etching tools, wafer-level
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@TU/e cleanroom facility (http://www.tue.nl/nanolab ), which hosts a state-of-the-art 4” processing line for III-V semiconductors, including an ASML DUV scanner, AIXTRON MOCVD G10 epitaxy reactor
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, dielectric thickness tuning, densification windows, yield ramp) MOCVD epitaxy development for 111-V / GaN on Si (uniformity, defect control, repeatability on 200 mm) Supporting unit processes: CMP, thermal
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the fundamentals (the physics of devices and semiconductors) to materials (growth of graphene and MoS2 materials by CVD and MOCVD, surface functionalisation, advanced characterisation), through to devices
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aspects, from the fundamentals (the physics of devices and semiconductors) to materials (growth of graphene and MoS2 materials by CVD and MOCVD, surface functionalisation, advanced characterisation
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, advanced atomic layer deposition and MOCVD systems, the IonToF Qtac 100 low energy ion scattering facility, and extensive materials characterisation capabilities. Additional facilities are available through
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of devices and semiconductors) to materials (growth of graphene and MoS2 materials by CVD and MOCVD, surface functionalisation, advanced characterisation), through to devices (fabrication technology
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photonic devices based on III-Nitrides semiconductors. This will include MOCVD growth, chip fabrication, and testing of GaN and its alloys for optoelectronic applications as well as projects on UV laser