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systems have recently emerged for quantum technologies: single fluorescent defects in silicon. These single color centers are not only incorporated in silicon, the ideal platform for large-scale
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-like formats, as well as colored and high-performance solar modules. We use both single-junction silicon and III-V multi-junction solar cells. III-V multi-junction solar cells consist of several subcells
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on the realization, characterization and measurement of the structural and transport properties of superconducting devices made entirely out of silicon. Superconducting Si thin layers will be realized by Gas Immersion
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National Aeronautics and Space Administration (NASA) | Pasadena, California | United States | 7 days ago
), doi:10.1109/JSEN.2024.3391191 Cochrane, C., Blacksberg, J., Anders, M. et al. Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide. Sci Rep
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metal dichalcogenides are promising platforms for next-generation quantum and electronic devices, where atomic defects play a crucial role in determining functionality. This project develops a machine
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Grenoble Alpes), LMI (Université de Lyon), and CEA-LETI (Grenoble). 3C-SiC, the cubic polytype of silicon carbide, is an extremely promising material for medium-voltage power electronics. However, its
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-electricity conversion in silicon-based photovoltaic devices. Using off-axis electron holography in a transmission electron microscope combined with ultrafast laser excitation and pulsed electron beams, the
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industry, to make the luminescent materials. Targeted materials are Yb³⁺-doped inorganic semiconducting sulphide materials, emitting in the infra-red spectral range, where silicon solar cells have high
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service for our students, staff and visitors. You will be required to answer queries, report any defects and assist in keeping the various users informed of site activities and will be expected to complete