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on the design and fabrication of prototype nanostructure electronic devices such as FinFETs for applications in high power electronics. We welcome proposals aimed at new technological aspects of semiconductor
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integrated devices architectures, such as three-dimensional integrated circuits (3D-ICs), are poised to open up new avenues for more powerful functionally diverse electronics devices. Unfortunately, there is a
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, Nanoscale Device Characterization Division opportunity location 50.68.03.B4752 Gaithersburg, MD 20899 NIST only participates in the February and August reviews. Advisers name email phone Christina Ann Hacker
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location 50.68.72.B8373 Boulder, CO NIST only participates in the February and August reviews. Advisers name email phone Mark William Keller [email protected] 303.497.5430 Joel N. Ullom joel.ullom
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, Applied Chemicals and Materials Division opportunity location 50.64.72.B7092 Boulder, CO NIST only participates in the February and August reviews. Advisers name email phone Jake Benzing jake.benzing
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opportunity location 50.77.51.B7982 Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Peter Bajcsy [email protected] 301.975.2958 Ram D. Sriram sriram
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.B7029 Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Joseph A. Dura [email protected] 301.975.6251 Charles F. Majkrzak [email protected]
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50.64.41.B8206 Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Samuel P. Forry [email protected] 301.975.5246 Timothy P. Quinn [email protected]
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50.61.01.B6536 Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Paul David Butler [email protected] 301.975.2028 Description Combining Small-Angle
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Gaithersburg, MD NIST only participates in the February and August reviews. Advisers name email phone Elizabeth Grace Kelley [email protected] 301.975.8584 Description Biological membranes are a dynamic