303 electronics-"https:"-"https:"-"https:"-"https:"-"https:"-"https:" positions at NIST
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MultiPhysics Measurements and Modeling for Microelectronics at Microwave and mm-Wave Frequencies NIST only participates in the February and August reviews. Performance, security, and reliability
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Broadband Electromagnetic Characterization of Thin-Film Electronic Materials and Devices NIST only participates in the February and August reviews. Electronic material are important for an extremely
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RAP opportunity at National Institute of Standards and Technology NIST First-Principle Based Modeling for Advancing 2D Electronics Location Material Measurement Laboratory, Materials Science and
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NIST only participates in the February and August reviews. The modern transmission electron microscope (TEM) is capable of atomic-resolution structural and chemical imaging. However, such data
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RAP opportunity at National Institute of Standards and Technology NIST Coupling electronic structure methods, artificial intelligence, and data-driven approaches for next-generation quantum
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RAP opportunity at National Institute of Standards and Technology NIST AI/ML on facility-scale electron microscopy data Location Laboratory Programs, Research Data and Computing Office
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chemically complex liquid-gas, solid-liquid, and solid-gas interfaces under realistic conditions, but the very small electron mean free path inside the dense media imposes serious experimental challenges
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Fabrication and Characterization of Active Interfaces Relevant to Wide Band Gap (WBG) Semiconductors Electronics NIST only participates in the February and August reviews. The unique electronic
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RAP opportunity at National Institute of Standards and Technology NIST First-Principles Modeling of Electronic Structure and Near-Edge X-Ray Spectroscopy Location Material Measurement Laboratory
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-of-the-art superconducting qubits, and the Quantitative Nanostructure Characterization Group, who are experts in (scanning) transmission electron microscopy ((S)TEM) characterization of materials. Our