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on semiconductor heterostructures, using design techniques similar to the ones employed for quantum cascade lasers, as well as electromagnetic design of the microcavity array (an array of metal-insulator-metal
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of the complex III-V semiconductor stack forming the laser and transferred onto a 300 mm substrate by molecular bonding. A simplified example of the laser structure is: InP (4 µm) / GaAlInAs quantum wells (400 nm
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the cavity provides insight into the physical properties of the condensate. Experimental research will be conducted using semiconductor cavities fabricated using the nanotechnology resources available at C2N
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knowledge of microelectronics, semiconductor devices and cleanroom fabrication technologies. Experience in the fabrication of III-V or wide bandgap semiconductor devices would be appreciated, in particular
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. The activity of the Research axis 3 falls into the domain of quantum nanophotonics. We are first interested in nanosources of light: - colloidal semiconductor nanocrystals based on CdSe, at the single object
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. 2018, doi: 10.1021/acs.nanolett.9b01583. [3] K. H. Au-Yeung et al., “Atomic-Scale Quantum Control of Single Spin Defects in a Two-Dimensional Semiconductor,” Feb. 25, 2026. [4] P. Dreher et al
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surface based on elementary or unit cells incorporating active materials (electrically or optically), will require the development of technologies capable of replacing semiconductor components distributed
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Eligibility criteria The project is experimental. We are looking for motivated and experienced candidates in some (but not all) of the following areas: semiconductor device physics and technology