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community has so far favored resistive Compute-in-Memory using memristors, this approach faces physical barriers when scaling up: high static currents, Joule losses, leakage, and voltage drops (IR
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manufacturing high-voltage, high-current components for applications such as smart grids. The INL has been working for several years on the physical characterization of this material. Today, the quality
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. This is particularly interesting for the family of group III-nitride semiconductors (i.e., AlN, GaN, InN and their alloys), forming the active regions in commercial light-emitting diodes (LEDs) and high
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