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and NEEL as part of the Inspiring project, have demonstrated the possibility of using selective epitaxy of planar InAs, InSb or HgTe nanowires to achieve a more robust and reliable technology. In the
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epitaxial growth, fabrication and characterization of GaN-based microLEDs on TiN metal substrates using Metal Organic Vapor Phase Epitaxy (MOVPE). CRHEA (Centre de Recherche sur l'Hétéro-Epitaxie et ses
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