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position is to develop the first Ga203 power device based on a heterojunction, enabling its electrical, physical, and optical characterization in order to determine the optimal parameters for finite
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electrical mapping techniques; Structural and functional characterization of interfaces and junctions, in particular through nanoscale analyses; Development, adaptation, and optimization of experimental
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recruitment opportunities. The Postdoc WP2 position focuses on the fabrication and electrical characterization of epitaxially grown two dimensional dichalcogenide Mott materials. The goal is first to optimize
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, TEM) and electrical characterization techniques. You will develop semi-automated characterization protocols (I-V, C-V, pulsed) on samples and 300-mm wafers. You will analyze the variability in write and
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growth (3 MOCVD reactors for GaN) and device fabrication in clean-room ( https://www.crhea.cnrs.fr/en/technology-platform.htm ). For structural and optical characterization, CRHEA benefits from the P
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researcher will be responsible for the design, synthesis, and characterization of intermetallic alloy flakes resonating below 1 GHz. Initially, the researcher will focus on the Ni₁₋ₓFeₓ solid solution to
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neuroprostheses • To study and define 'signature' electrical signals associated with neurodegenerative diseases, particularly in the context of hallucinations • To identify suitable signal processing