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Laser Doping or Pulsed Laser Induced Epitaxy, allowing the fabrication of ultra-doped Si:B layers, well above the B solubility limit in Si. The films will be characterized by X-Ray Diffraction
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will be to analyze the performances of ultrathin hBN flakes (down to the monolayer limit) doped with VB centers for quantitative magnetic field imaging at cryogenic temperature (4K). The 2D quantum
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on coordinated campaigns combining synthesis and multi-scale spectroscopy. The materials, synthesized at IRCELYON with independent control of phase, doping, and defects, will be characterized there by XPS/UPS in
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will explore (Gd, Zr, La)-doped HfO₂ as a reference ferroelectric layer and optimize performance (memory window, multilevel writing, endurance) through the fine-tuning of thin films (interlayers
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(pure and metal-doped) and carbon chains in supernova ejecta. • Apply molecular dynamics (MD) methods to simulate the formation of alumina agglomerates. • Use ab initio wave function methods to model
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the inhomogeneous absorption profile is broad (~2 GHz for 0.1% doping concentration), a natural solution is to use the SHs for a limited duration and then shift to a new frequency tens of MHz away (this value being
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of radionuclide-doped insoluble organic matter under environmentally realistic geochemical conditions; Determining labile and inert radionuclide fractions at different incubation times using complementary
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heating. We have developed a custom microfabricated chip based on doped Si electrodes etched on a SiO2 insulating layer. The chip has been characterized and exhibits both long trapping times and low heating